C-SOI®  is a bonded SOI wafer with built-in sealed cavities on the handle wafer or on the buried oxide. As the patterning is etched before bonding, C-SOI® makes it possible to process complex and developed structures that standard BSOI wafers do not allow. The process enables extremely thin membranes, which widens the variety of design and processing possibilities. 

• Pressure sensors
• Silicon microphones and fluidic components, while thicker layers are suitable for inertial sensor manufacturing
• IC and MEMS process integration
• Integrated backside packaging and hermetic sealing. 

• The reduction of device size and cost, without compromising the device precision
• More streamlined device manufacturing process
• Optimization of electrical properties E.g. minimization of parasitic capacitances
• Flexibility to adjust the gap between released structure and the substrate
• Well-defined horizontal dimensions