BSOI solutions are used i.a. for advanced pressure sensors, microfluidic components, MEMS, flow sensors, actuators, 3-axis accelerometers, gyroscopes and silicon microphones. They also offer a new type of solution for the manufacturers of RF components and high voltage applications such as gate drivers (IGBT/Power MOSFET), smart power/high voltage BCD and lateral HV devices. The possibility to tailor and modify parameters helps reach the full potential of any design idea in advanced device development. 
                                                                                   
Often combined with DRIE etching, the main benefits of BSOI include:

• The option for vertical sidewalls
• High etching rate, and effective etch stop
• Predictable and consistent bulk behavior in etching
• Excellent accuracy and uniformity of the etched structures