Our Silicon on Insulator (SOI) wafers are manufactured by bonding technology. Two silicon wafers are bonded together, having an insulating oxide between. In a typical application sensing elements and possible IC devices are built on the active layer. Oxide is an effective etch-stop, and can act also as a sacrificial layer. Handle wafer is supporting the structure but it can also be utilized in sealing the structure or as part of the sensing element.

Controlling the whole wafer manufacturing line in-house enables us to monitor all the critical parameters for the highest quality SOI. This enables the option to select electrical conductivity, and e.g. SOI with different combinations of crystallographic orientations to utilize anisotropic properties of silicon.  

SOI wafers specifications          

Growth Methods	Cz, MCz
Diameter	150, 200mm
Crystal Orientation	<100>, <110>, <111>
N Type Dopants	Arsenic, Phosphorus, Red Phosphorus
P Type Dopants	Boron
Resistivity	<1mOhm-cm up to over 5,000 Ohm-cm
Thickness	SOI layer: up to > 200um, standard tolerance ±0.3um (for specific applications < even tighter) Handle wafer: from 300 um to 950 um Back surface polished or etched
Buried Oxide:	Type: Thermal Oxide