Avaliable Range of Epi Services                                                                                         

• Double-side polished epi

• Thick epi
• BL epi service
• High-resistivity epi
• Epi on SOI wafers
• SiGeB etch-stop layer epi
• Thickness range: 1-150 μm
• Resistivity range: 0.0006-1600 Ohm-cm
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Available Size
• 100mm-200mm

Application
• Power Semiconductor
• MEMS
• Discrete devices
• Integrated circuits
• Analog devices
• Electrical Sensors
• RF Devices

Thick Epi
Our thick epi is especially suitable for discrete power devices, such as IGBTs, FREDs, HV MOSFETs, and high-voltage Zener diodes. Our tight thickness and resistivity control and great uniformity for even very thick epi layers results in high yield and excellent device performance. 

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One of our specialties is epi for sensor applications, specifically epi on double-side polished (DSP) silicon wafers. Our extensive knowledge of DSP wafer and the DSP epi process allows us to use a proprietary process that results in great epi layer uniformity for best device performance and allows bonding on the backside of the wafer.